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BG5130R
DUAL - N-Channel MOSFET Tetrode * Low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage * Integrated gate protection diodes * Low noise figure * High gain, high forward transadmittance * Improved cross modulation at gain reduction * Biasing network partially integrated
BG5130R
6 5 4
4 5 6 1
2
3
B A
1 2 3
Drain AGC RF Input RG1 VGG G2 G1 GND
RF Output + DC
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BG5130R
Package SOT363 1=G1* 2=S
Pin Configuration 3=D* 4=D** 5=G2
Marking 6=G1** KYs
* For amp. A; ** for amp. B
Maximum Ratings Parameter Symbol Value Unit
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS 78 C Storage temperature Channel temperature
VDS ID IG1/2SM V G1/G2S Ptot Tstg Tch
8 25 1 6 200 -55 ... 150 150
V mA V mW C
1
2006-04-13
BG5130R
Thermal Resistance Parameter Symbol Rthchs Value 280 Unit
Channel - soldering point 1)
K/W
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 1 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V Drain-source current VDS = 3 V, VG2S = 3 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 3 V, VG2S = 3 V, ID = 20 A Gate2-source pinch-off voltage VDS = 3 V, VG1S = 3 V, ID = 20 A
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 12 6 6 -
Values typ. 10 0.6 0.7 max. 15 15 50 50 100 -
Unit
V
nA
mA V
2
2006-04-13
BG5130R
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 3 V, V G2S = 3 V Gate1 input capacitance VDS = 3 V, V G2S = 3 V, f = 10 MHz Output capacitance VDS = 3 V, V G2S = 3 V, f = 10 MHz Power gain VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz Noise figure VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 800 MHz VDS = 3 V, I D = 10 mA, VG2S = 3 V, f = 45 MHz Gain control range VDS = 3 V, V G2S = 3...0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 AGC = 10 dB AGC = 40 dB dB 90 96 94 92 98 G p 45 1 1.3 F 35 dB 24 Gp dB Cdss 1.6 Cg1ss 2.7 pF g fs 41 mS typ. max.
Unit
3
2006-04-13
BG5130R
Total power dissipation Ptot = (TS) Drain current ID = (IG1) VG2S = 3V
300 30
mW
mA
P tot
200
20
150
ID
15 100 10 50 5 0 0 120 C 0 0
20
40
60
80
100
150
10
20
30
40
A
60
TS
IG1
Output characteristics ID = (V DS)
Gate 1 current IG1 = (V G1S) VDS = 3V VG2S = Parameter
22
mA
200
18 16
1.4V A 4V
ID
14 12
1.3V
IG1
3.5v
100 10 8 6 4 2 0 0 2 4 6 8
V 1.1V 1.2V 3V 2.5V 2V
50
1V
12
0 0
0.5
1
1.5
2
V
3
VDS
VG1S
4
2006-04-13
BG5130R
Gate 1 forward transconductance g fs = (ID) VDS = 3V, VG2S = Parameter
60
mS 3V 2.5V
Drain current ID = (V G1S) VDS = 3V VG2S = Parameter
28 mA 24 22 20
2V 3V 2.5V
50 45
G fs
40 35 30 25 20 15 10 5 0 0 5 10 15 20
mA 1.5V 2V
ID
18 16 14 12 10 8 6 4 2
1V 1.5V
30
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
1.8
ID
VG1S
Drain current ID = (VGG ) VDS = 3V, VG2S = 3V, RG1 = 68k
(connected to VGG, VGG =gate1 supply voltage)
14
mA
Drain current ID = (VGG) VG2S = 3V RG1 = Parameter in k
28
mA 56K 47K
10
20
68K
ID
8
ID
16
82K 100K
6
12
4
8
2
4
0 0
1
V
3
0 0
1
2
3
V
5
VGG
VGG=VDS
5
2006-04-13
BG5130R
Power gain Gps = (VG2S) f = 45 MHz
40
Noise figure F = (VG2S) f = 45 MHz
8
dB dB
G ps
20
F
10 4 0 2 -10 -20 0
V
1
3
0 0
1
V
3
VG2S
VG2S
Noise figure F = (VG2S) f = 800 MHz
7
Power gain Gps = (VG2S) f = 800 GHz
30
dB
dB
Gps
V
5
10
F
4
0 3
2
-10
1 0
1
3
-20 0
1
V
3
VG2S
VG2S
6
2006-04-13
BG5130R
Crossmodulation Vunw = (AGC) VDS = 3 V, Rg1 = 68 k
115
dBV
V unw
105
100
95
90
85 0
5
10
15
20
25
30
35
40 dB
50
AGC
7
2006-04-13
BG5130R
Crossmodulation test circuit
VAGC
VDS 4n7
R1 10k 4n7
2.2 uH
4n7
RL
50
RGEN
50
4n7 50 RG1
VGG
Semibiased
8
2006-04-13
Package SOT363
BG5130R
Package Outline
2 0.2 0.2 -0.05
+0.1
0.9 0.1 6x 0.1 4
1.25 0.1 2.1 0.1
M
0.1 MAX. 0.1 A
6
5
Pin 1 marking
1
2
3
0.1 MIN.
0.65 0.65 0.2
M
0.15 +0.1 -0.05 A
Foot Print
0.3
0.9 0.7
0.65 0.65
Marking Layout (Example)
Small variations in positioning of Date code, Type code and Manufacture are possible.
1.6
Manufacturer
2005, June Date code (Year/Month)
Pin 1 marking Laser marking
BCR108S Type code
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel.
4
0.2
2.3 8
Pin 1 marking
2.15
1.1
9
2006-04-13
BG5130R
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
10
2006-04-13

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